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Metalizations Offered
TiW = 300–800Å (0.03–0.08µm)
Cr = 300–800Å (0.03–0.08µm)
TaN = 10–200 ohms/square are available.
50–75–100 ohms/square standard.
Typical TCR = -100 ± 50ppm/°C
Ni = 1,000–10,000Å (0.1µm–1µm)
Pd = 1,000–10,000Å (0.1µm–1µm)
Pt = 1,000–10,000 Å (0.1µm–0.1µm)
Au = 20–500µ" (0.5µm–12.7µm)
TiW/Au
Used for conductor only applications that require Au/Sn, Au/Ge, Au/Si, and epoxy attachment. Good bonding attachment. Not good for PbSn solders.
TiW/Ni/Au
Used for conductor only applications that requires PbSn solders, Au/Sn, Au/Ge, Au/Si, and epoxy attachment. Possible Ni-Au diffusion, bonding may be affected when devices processed > 300°C.
TiW/Pd/Au
Used for substrates that requires PbSn solders, Au/Sn, Au/Ge, Au/Si, and epoxy attachment. This metalization is best for Au/Si and will minimize eutectic leaching. Possible Pd-Au diffusion, bonding may be affected when devices processed > 300°C.
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TaN/TiW/Au
Used for substrates that require integrated resistors. Resistors stabilize at 450°C. Good Au/Sn, Au/Ge, Au/Si, and epoxy attachment. Good bonding attachement. Not good for PbSn solders.
TaN/TiW/Ni/Au
Used for substrates that require PbSn solders and integrated resistors. Resistors stabilize at 450°C. This metalization is best for PbSn solders, Au/Sn, Au/Ge, Au/Si, and epoxy attachment. Not good for possible Ni-Au diffusion, bonding may be affected when devices processed > 300°C.
TaN/TiW/Pd/Au
Used for substrates that require PbSn solders and integrated resistors. Resistors stabilize at 450°C. This metalization is best for Au/Si and will minimize eutectic leaching. Au/Sn, Au/Ge, and epoxy can also be used. Not good for possible Pd-Au diffusion, bonding may be affected when devices processed > 300°C.
Other metalizations and thicknesses are available. Please contact our sales department for information. |