Samples

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ATP1001 - Standard Metalization

Standard TaN/TiW/Au metalization on Aluminum Oxide (Al2O3) is used in applications that require wire bonding, ribbon bonding, epoxy and various other types of attachment. Such as Gold Tin, Gold Germanium and Gold Silicon. Download Data Sheet in PDF format.

ATP1002 - Solderable Nickel Metalizations

TaN/TiW/Ni/Au is one of the Solderable metalizations on Aluminum Oxide (Al2O3) ATP offers. Due to the thinner layer of Ni, this metalization scheme allows soldering, wire bonding, and ribbon bonding with integrated TaN resistors. Download Data Sheet in PDF format.

ATP1003 - Palladium Metalization

TaN/TiW/Pd/Au metalization on Aluminum Oxide (Al2O3) is a wire bondable metalization scheme that is processed in a proprietary manner that reduces the amount of Au “Leaching” that commonly occurs during densely populated high temperature attachments, such as Gold Germanium and Gold Silicon. This process allows a good fillet attachment around your components without leaching outlining areas. Download Data Sheet in PDF format.

ATP1004 - Solderable AlN Submount

TiW/Pd/Au is a Solderable metalization scheme on Aluminum Nitride (AlN). With a material thickness tolerance of ± 0.0005" (0.0127mm), surface finish of less than 2µ" (50nm), and a minimum thermal conductivity of 170 Watts/mK it is ideal for thermal applications or mounting and aligning the most sensitive light emitting diodes. Download Data Sheet in PDF format.

ATP1005 - Solderable BEO Submount

TiW/Pd/Au is a Solderable metalization on Beryllium Oxide (BeO). Since BeO has a thermal conductivity of 270 Watts/mK it is ideal for the toughest thermal applications. Download Data Sheet in PDF format.

ATP1006 - Plate Thru Vias

TaN/TiW/Au metalization with CO2 laser drilled conductive plated thru via holes in Aluminum Oxide (Al2O3) provides a cost effective solution for applications that require interconnects to ground. The conductive plated thru vias replace the tedious process of bonding from the top side of the circuit to ground. Download Data Sheet in PDF format.

ATP1007 - Polyimide Bridges

TaN/TiW/Au metalization on Aluminum Oxide (Al2O3) with polyimide supported Lange coupler interconnects. This process provides a consistent Lange coupler interconnect, which reduces test and tune time and eliminates wire bonding. Since the interconnects are supported by 3 to 4 microns of polyimide there is no risk of damaging the bridge during shipment or assembly. Download Data Sheet in PDF format.

ATP1008 - Plated Gold Bumps

TaN/TiW/Au metalization with plated gold bumps on Aluminum Oxide (Al2O3). Gold Bumps are used to eliminate wire bonding which will improve electrical performance at higher frequencies. This is done by eliminating long bond wires and flipping the chip on to the Gold contact bumps. Download Data Sheet in PDF format.

ATP1009 - Polyimide Filled Vias

TaN/TiW/Au metalization with polyimide filled conductive plated thru CO2 laser drilled via holes in Aluminum Oxide (Al2O3). Polyimide is used as a non-conductive plug for via hole assemblies. Will prevent epoxy and eutectic solders from reaching the surface of the circuit, while keeping continuity between back side and front side surfaces. Download Data Sheet in PDF format.

ATP1010 - Fused Silica/Quartz Circuit

TaN/TiW/Au on Fused Silica/Quartz is used in applications that require a low Dielectric Constant Material. This material has a 60/40 Optical polish with a material thickness tolerance of 0.0005" (0.0127mm). This material is used in applications that require wire bonding, ribbon bonding, epoxy and various other types of attachment. Such as Gold Tin, Gold Germanium and Gold Silicon. Download Data Sheet in PDF format.

ATP1011 - AlN Circuit

TaN/TiW/Au on Aluminum Nitride (AlN) is used in applications that require wire bonding, ribbon bonding, epoxy and various other types of attachment. Such as Gold Tin, Gold Germanium and Gold Silicon. With a material thickness of ± 0.0005"” (0.0127mm), surface finish of less than 2µ" (50nm) and a minimum thermal conductivity of 170 Watts/mK. Download Data Sheet in PDF format.

ATP1012 - Au Solid Filled Via

TaN/TiW/Au with solid Gold filled vias on Aluminum Oxide (Al2O3). The Au Via is completely filled and polished to provide a planarized surface providing a low inductance ground path. Filled vias can also act as a thermal via or two-sided signal interconnect. Download Data Sheet in PDF format.

ATP1014 - Pre-deposited Gold Tin (Au/Sn)

TaN/TiW/Au with pre-deposited and patterned Gold Tin (Au/Sn) on Aluminum Nitride (AlN). The use of pre-deposited and patterned Au/Sn replaces the more traditional approach of using Au/Sn preforms. The Au/Sn will have accurate placement and dimensions. The thickness is tightly controlled. Multiple Au/Sn locations can be patterned on the circuits without any additional cost. The accurate, thin Au/Sn thicknesses aid in the laser attachment and alignment resulting in less assembly time and better yields. ATP’s standard alloy composition is 80% Au and 20% Sn and reflows at 280°C. Download Data Sheet in PDF format.

ATP1015 - Enforced Via

TaN/TiW/Au with Conductive plated thru CO2 drilled via holes with ATP’s Enforced hollow plated Via Wrap on Aluminum Oxide (Al2O3). The Enforced via wrap is an additive process to ATP’s standard via process. This process will insure increased via hole stability and conductivity. Download Data Sheet in PDF format.

ATP1016 - Epoxy No Bleed Metalization

TaN/TiW/Au metalization on Aluminum Oxide (Al2O3). ATP offers a proprietary Gold metalization scheme that reduces epoxy bleed out during assembly. This process is wire and ribbon bondable. Download Data Sheet in PDF format.

ATP1017 - AlN Solid Filled Via

TaN/TiW/Au with solid Gold filled vias on Aluminum Nitride (AlN) is used in applications that require wire bonding, ribbon bonding, epoxy and various other types of attachment. Such as Gold Tin, Gold Germanium and Gold Silicon. Download Data Sheet in PDF format.

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